Low pressure VPE of In-doped ZnSe with controlled electrical properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Preparation of low‐resistivityn‐type ZnSe by organometallic chemical vapor deposition
2. Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes
3. Molecular beam epitaxy of indium-doped ZnSe
4. Superiority of group VII elements over group III elements as donor dopants in MOCVD ZnSe
5. Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy
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1. Elemental, structural and optical properties of nanocrystalline Zn 1−x Cu x Se films deposited by close spaced sublimation technique;Journal of Science: Advanced Materials and Devices;2017-03
2. Characterization of vacuum-evaporated ZnSe thin films;Physica B: Condensed Matter;2007-04
3. Characteristics of Chlorine-Doped ZnSe Films and ZnSe–ZnS Superlattices Grown by Hot Wall Epitaxy;Japanese Journal of Applied Physics;1994-04-15
4. Theory of the self-compensation in p-type ZnSe;Journal of Crystal Growth;1992-02
5. Capacitance-voltage characterization of n-ZnSe/n-GaAs heterojunctions;Journal of Crystal Growth;1992-02
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