Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE-Reference-Cited by-同舟云学术

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Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE

Published:1991-01 Issue:1-4 Volume:107 Page:410-415
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Achargui N.,Benachenhou A.,Foucaran A.,Bougnot G.,Coulon P.,Laurenti J.P.,Camassel J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Heteroepitaxial growth of GaAs on sapphire substrates by a three-step method using low pressure MOCVD

2. Proc. 11th Intern. Symp. on GaAs and Related Compounds;Fontaine,1985

3. Formation and characterization of CdS/ZnSiAs2 heterojunctions

4. Theory of the band-gap anomaly inABC2chalcopyrite semiconductors

5. Ternary Chalchopyrite Semiconductors;Shay,1975

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pressure effect on mechanical stability and optoelectronic behavior of Zinc-Silicon Diarsenide ZnSiAs2-Chalcopyrite: DFT investigation;Optik;2017-06

2. Preparation and Photoelectrochemical Characterization of ZnSiAs2 Crystals;The Journal of Physical Chemistry B;1997-04-01

3. Growth of NLO Chalcopyrite Materials by Omvpe;MRS Proceedings;1997

4. Zinc silicon arsenide (ZnSiAs2) transport properties;Landolt-Börnstein - Group III Condensed Matter

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