Investigation of MOCVD growth of AlxGa1−xAs/GaAs and AlxGa1−xAs/GaAs/AlxGa1−xAs/GaAs multilayer structures with high Al content
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Distributed-Feedback Double-Heterostructure GaAs Injection Laser with Fundamental Grating
2. Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique
3. Growth of semi-insulating epitaxial gallium arsenide by chromium doping in the metal-alkyl+hydride system
4. The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition
5. Growth of GaxIn1 −xAs and GaxIn1 −xAsyP1 −y using preformed adducts
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