Studies of growth processes from the vapour phase of silicon carbide epitaxial layers-Reference-Cited by-同舟云学术

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Studies of growth processes from the vapour phase of silicon carbide epitaxial layers

Published:1977-09 Issue:1 Volume:40 Page:59-68
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lilov S.K.,Tairov Yu.M.,Tsvetkov V.F.,Yudin B.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference2 articles.

1. Termodinamicheskie Svoistva Individualnih Veshestv,1962

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1. Open Issues in SiC Bulk Growth;Materials Science Forum;2014-02

2. Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (11\bar20) 6H-SiC Substrates;Japanese Journal of Applied Physics;2004-04-09

3. Optically Transparent 6H-Silicon Carbide;Materials Science Forum;1998-02

4. A thermodynamical approach to tetramethylsilane (TMS) pyrolysis; application to SiC coatings obtained by MOCVD;Journal of Crystal Growth;1993-03

5. Thermodynamic study of the solubility process of boron in silicon carbide, grown from the vapour phase;Journal of Physics and Chemistry of Solids;1986-01

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