X-ray topographic investigation of cellular structure in semi-insulating GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Study of dislocations in highly in doped GaAs crystals grown by liquid encapsulation czochralski technique
2. Semi-Insulating III–V Materials, Hakone, 1986;Chabli,1986
3. Identification of Burgers vectors along <111> in In-doped GaAs, by X-ray transmission topography and image simulation
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2. Convective heat and mass transfer at the solidification front of binary alloys subjected to laser treatment;The Physics of Metals and Metallography;2007-01
3. Residual disorder in low pressure, low thermal gradient liquid encapsulated Czochralski gallium arsenide observed in high resolution synchrotron diffraction imaging;Journal of Crystal Growth;1996-11
4. X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals;Acta Physica Polonica A;1993-10
5. OH bonds in gallium arsenide grown by the liquid-encapsulated Czochralski crystal-growth method;Physical Review B;1992-03-15
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