The growth by MOCVD of low-doped p-Type GaAs using a dimethylzinc adduct
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
2. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
3. A study of p-type dopants for InP grown by adduct MOVPE
4. The growth of Magnesium-doped GaAs by the Om-Vpe process
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1. N-Donor adducts of dimethylzinc;Inorganic Syntheses;2007-01-05
2. Single-molecule precursor chemistry for the deposition of chalcogenide(S or Se)-containing compound semiconductors by MOCVD and related methods;Journal of Materials Chemistry;1995
3. Cadmium and Zinc;Comprehensive Organometallic Chemistry II;1995
4. Misorientation dependence of zinc incorporation in GaAs;Journal of Crystal Growth;1994-09
5. p-Doping of GaAs and AlGaAs using the triethylamine adduct of dimethylzinc;Advanced Materials for Optics and Electronics;1994-09
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