Vapour phase epitaxial growth of high purity GaAs with the AsCl3-Ga-N2 system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. The preparation of high purity gallium arsenide by vapour phase epitaxial growth
2. Residual Impurities in High-Purify Epitaxial GaAs
3. Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers
4. High Purity Epitaxial GaAs
5. Proc. 6th Intern. Symp on GaAs and Related Compounds;Wolfe,1977
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