A flow channel reactor for GaAs vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
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2. Epitaxial Growth of Doped and Pure GaAs in an Open Flow System
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1. The stability of a compressible fluid with variable transport properties in a horizontal chemical vapour deposition reactor;The Chemical Engineering Journal and the Biochemical Engineering Journal;1994-07
2. A mathematical representation of a modified stagnation flow reactor for MOCVD applications;Journal of Crystal Growth;1991-02
3. Si Deposition Rates in a Two‐Dimensional CVD Reactor and Comparisons with Model Calculations;Journal of The Electrochemical Society;1990-07-01
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Effect of boundary conditions at the lateral walls on the thermal entry lengths of horizontal CVD reactors;International Journal of Heat and Mass Transfer;1988-11
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