Photoassisted MBE growth of doped CdTe and CdMnTe thin films and their characterization-Reference-Cited by-同舟云学术

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Photoassisted MBE growth of doped CdTe and CdMnTe thin films and their characterization

Published:1992-02 Issue:1-4 Volume:117 Page:820-825
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Waag A.,Kuhn T.A.,Schmeusser S.,Schmied B.,Kraus M.M.,Kallis N.,Ossau W.,Bicknell-Tassius R.N.,Landwehr G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Donors and acceptors in tellurium compounds; The problem of doping and self-compensation

2. Annealing of indium‐implanted CdTe

3. Controlled substitutional doping of CdTe thin films grown by photoassisted molecular‐beam epitaxy

4. Photoassisted molecular beam epitaxy of wide gap II–VI heterostructures

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth and characterization of Cd1−xMnxTe films on Si(1 1 1) substrates;Journal of Crystal Growth;2019-09

2. Electrochemical growth and characterization of manganese telluride thin films;Materials Chemistry and Physics;2004-03

3. Iodine-impurity level in MBE-grownCd1−xMnxTe;Physical Review B;1999-05-15

4. Properties of epitaxially grown CdTe layers doped with indium;Thin Solid Films;1995-10

5. Halogen doping of II–VI semiconductors during molecular beam epitaxy;Journal of Crystal Growth;1994-04

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