Epitaxial growth of A1N film by low-pressure MOCVD in gas-beam-flow reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films
2. Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α -Al2O3Substrate
3. A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor
4. Gas Flow Pattern and Mass Transfer Analysis in a Horizontal Flow Reactor for Chemical Vapor Deposition
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2. Effect of substrate temperature and bias voltage on the crystallite orientation in RF magnetron sputtered AlN thin films;Thin Solid Films;2006-09
3. Growth of Atomically Flat-Surface Aluminum Nitride Epitaxial Film by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2005-05-10
4. Cracking mechanism in AlN(11(2)over-bar0)/alpha-Al(2)O(3)(1(1)over-bar02) heteroepitaxial films grown by MOCVD;Journal of Materials Science;2001
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