Formation and epitaxial growth of titanium-disilicide on Si (111)-Reference-Cited by-同舟云学术

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Formation and epitaxial growth of titanium-disilicide on Si (111)

Published:1991-12 Issue:1-4 Volume:115 Page:579-588
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Choi Chi-Kyu,Park Hyung-Ho,Lee Jeong Yong,Cho Kyoung-Ik,Paek Mun-Cheol,Kwon Oh-Joon,Kim Kun-Ho,Yang Soo-Jeong

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. An optimally designed process for submicrometer MOSFET's

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Ti and TiSi2 films on Si(111) by low energy Ti+ beam deposition;Surface Science;2000-05

2. Scanning tunneling microscope investigation of the growth morphology of titanium silicide on Si(111) substrates;Journal of Applied Physics;1995-10-15

3. Scanning tunneling microscope crystallography of titanium silicide on Si(100) substrates;Journal of Applied Physics;1995-01-15

4. Ambient and High Temperature STM Investigations of the Growth of Titanium Suicide on Silicon Substrates;MRS Proceedings;1994-01

5. Growth Mode of Ti-Thin Films on Si(111) and Double Heteroepitaxial Growth of Epi-Si/Epi-TiSi2/Si(111);Control of Semiconductor Interfaces;1994

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