Author:
Ogata Toshihiro,Gheyas Syed Irfan,Ikejiri Makoto,Ogawa Hiroshi,Nishio Mitsuhiro
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by
12 articles.
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1. Synchrotron radiation-excited etching of ZnTe using Ar gas;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08
2. Photoluminescence properties of ZnTe homoepitaxial layers grown by synchrotron-radiation-excited growth using nitrogen carrier gas;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-01
3. Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-07
4. Recent studies on ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth;Fourth International Conference on Thin Film Physics and Applications;2000-11-29
5. Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources;Thin Solid Films;1999-04