Type I–type II band offset transition of the ZnMgSeZnTe system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
2. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
3. Band structure of ZnSe-ZnTe superlattices
4. A proposal forp‐type ZnS1‐xSex–ZnTe superlattices
5. Interband transitions of ZnTe‐ZnSe superlattices prepared on GaAs (100) by hot wall epitaxy
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2. Photoluminescence and Electromodulation Spectroscopy Characterization of Zn0.93Mg0.07Se and Zn0.81Be0.04Mg0.15Se Mixed Crystals;Journal of the Korean Physical Society;2008-07-15
3. Photoluminescence and surface photovoltage spectroscopy characterization of Zn1−x−yBexMgySe mixed crystals;Journal of Applied Physics;2008-05
4. Optical characterization of Zn0.96Be0.04Se and Zn0.93Mg0.07Se mixed crystals;Journal of Applied Physics;2008-01
5. First-Principles Study of Bipolar Dopability in the CuInO2 Transparent Semiconductor;Chemistry of Materials;2005-10-04
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