Some observations on stoichiometry and p-type doping in CdTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Growth of ZnTe by stoichiometric and off stoichiometric zone refining
2. Carrier transport and trapping process in high-resistivity CdTe grown by a modified THM
3. Ohmic contact and impurity conduction in P−doped CdTe
4. Automatic Potentiometric EDTA and Redox Titrations for Determinations of Stoichiometry.
5. Coulometrische bestimmung von gallium
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1. Off-stoichiometry determination of II–VI bulk crystals;Journal of Crystal Growth;2008-04
2. Optical monitoring of partial vapor pressures in CdTe and CdZnTe systems: a new tool for material technology development;IEEE Transactions on Nuclear Science;2005-12
3. A method for an accurate determination of stoichiometric deviations in CdTe and CdZnTe bulk crystals;Journal of Crystal Growth;2005-02
4. Off stoichiometry determination in cadmium telluride crystals;Journal of Alloys and Compounds;2004-05
5. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01
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