Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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4. InGaAs/InP graded‐index quantum well lasers with nearly ideal static characteristics
5. High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes
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1. New DFB grating structure using dopant-induced refractive index step;Journal of Crystal Growth;2004-01
2. Overgrowth of submicron-patterned surfaces for buried index contrast devices;Semiconductor Science and Technology;2000-03-08
3. Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well distributed feedback lasers on InP corrugated substrate;Journal of Crystal Growth;1999-08
4. Optical fiber chemical sensor systems and devices;Optical Fiber Sensor Technology;1998
5. Grating overgrowth and defect structures in distributed-feedback-buried heterostructure laser diodes;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
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