Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Some comparisons of chemical beam epitaxy with gas source molecular beam epitaxy

Published:1991-01 Issue:1-4 Volume:107 Page:999-1008
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davies G.J.,Skevington P.J.,Scott E.G.,French C.L.,Foord J.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. 2nd Intern. Conf. on Chemical Beam Epitaxy and Related Techniques,1989

2. Progress in chemical beam epitaxy

3. Progress in chemical beam epitaxy

4. W.T. Tsang, IEEE Trans. Circuits Devices, in press.

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4. Low-pressure pyrolysis studies of a new phosphorus precursor: Tertiarybutylbis(dimethylamino)phosphine;Journal of Electronic Materials;1996-09

5. Using Gaseous Sources in Molecular Beam Epitaxy;Devices Based on Low-Dimensional Semiconductor Structures;1996

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