Growth of semi-insulating InGaAsP alloys using low-pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Planar selective growth of InP by MOVPE
2. Semi-Insulating III–V Materials;Speier,1988
3. Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP
4. Semi-Insulating III–V Materials;Wolf,1990
5. Inst. Phys. Conf. Ser. 91;Nakai,1988
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Reliable and High-Speed 1.3 $\mu$m Complex-Coupled Distributed Feedback Buried-Heterostructure Laser Diodes With Fe-Doped InGaAsP/InP Hybrid Grating Layers Grown by MOCVD;IEEE Transactions on Electron Devices;2008-02
2. Uncooled 1.3-/spl mu/m complex-coupled DFB BH laser diodes with the Fe-doped InGaAsP-InP hybrid current-blocking grating;IEEE Photonics Technology Letters;2006-07
3. Optimization of selective area epitaxy for fabrication of circular grating distributed-Bragg-reflector surface-emitting lasers;Journal of Crystal Growth;1993-11
4. Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y⧸InP grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1993-02
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