Investigation of the mechanism and kinetics of growth of LPE GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. The physical processes occurring during liquid phase epitaxial growth
2. Computer simulations of liquid phase epitaxy of GaAs in Ga solution
3. The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growth
4. Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques
5. Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys
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1. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
2. Investigations on the concentration profiles of arsenic atoms during liquid phase epitaxial growth of GaAs from Ga-As-Bi solution;Materials Chemistry and Physics;1997-06
3. Supercritical supersaturations and ultrafast cooling of the growth solution in liquid-phase epitaxy of semiconductors;Semiconductor Science and Technology;1996-04-01
4. Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPE;Physica Status Solidi (a);1994-07-16
5. Kinetics of Long Term Finite Melt Liquid Phase Epitaxyal Growth of GaAs and GaAlAs Layers. I. Gallium Arsenide;Crystal Research and Technology;1993
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