Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Growth of highly uniform epitaxial layers over multiple substrates by molecular beam epitaxy

Published:1987-02 Issue:1-4 Volume:81 Page:188-192
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saito Junji,Igarashi Takeshi,Nakamura Tomohiro,Kondo Kazuo,Shibatomi Akihiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. An indium-free mount for GaAs substrate heating during molecular beam epitaxial growth

2. Molecular beam epitaxy of gallium arsenide using direct radiative substrate heating

3. GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth

4. Classification of Surface Defects on GaAs Grown by Molecular Beam Epitaxy

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Atomically Controlled Nanostructures and Their Device Application;Nanotechnology;1999

2. Recent progress in the multi-wafer CBE system;Journal of Crystal Growth;1996-07

3. Flux masking and thickness uniformity in molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11

4. Integration of vertical-cavity surface-emitting devices by molecular beam epitaxy regrowth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-09

5. HEMT Devices;Compound and Josephson High-Speed Devices;1993

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP