The screw and circular structures of Si and GaAs epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
2. Observation of Nucleus Centers on Solution‐Grown Germanium Epitaxial Layers
3. Mechanism of crystal growth in the SiCl4-H2 system
4. Defect-free nucleation of silicon on {111} silicon surfaces
5. Observation of screw dislocations in GaAs
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