The influence of growth conditions on the composition of GaInAsP grown by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy
2. Low-threshold 1.5μm DFB laser grown by GSMBE
3. High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers
4. InGaAsP photodiodes
5. GaAs, GaP, and GaAsxP1−x Epitaxial Films Grown by Molecular Beam Deposition
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
2. GaInAsP gas-source MBE technology;Thin Solid Films;1995-10
3. MOLECULAR BEAM EPITAXY WITH GASEOUS SOURCES;Integrated Optoelectronics;1995
4. Group-V composition control for InGaAsP grown by gas source molecular beam epitaxy;Journal of Electronic Materials;1994-11
5. Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molelcular beam epitaxy;Journal of Crystal Growth;1993-02
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