Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Proc. Intern. Symp. on the Foundations of Quantum Mechanics;Sakaki,1984
2. Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices
3. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
4. Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam Epitaxy
5. Interface roughness scattering in GaAs/AlAs quantum wells
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