Low-temperature growth of silicon on Si1−xGex by liquid phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. A one-dimensional SiGe superlattice grown by UHV epitaxy
2. Growth and properties of Si/SiGe superlattices
3. Technological Prospects for Germanium Silicide Epitaxy
4. The properties of Si/Si1-xGex films grown on Si substrates by chemical vapor deposition
5. Growth of Si1−xGexon silicon by liquid‐phase epitaxy
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1. Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications;Scientific Reports;2019-03-13
2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
4. Simulation of dissolution of silicon in an indium solution by spectral methods;Modelling and Simulation in Materials Science and Engineering;2002-08-07
5. Growth and characterization of silicon layers grown by liquid phase epitaxy on cast silicon and silicon sheet material;Thin Solid Films;1996-11
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