Radiative complex formation in vapor phase epitaxial GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Single crystal electroluminescent materials
2. Recombination processes associated with “Deep states” in gallium phosphide
3. The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport Mechanism
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Neutral (Cu-Li) complexes in GaP: The (Cu-Li)Ibound exciton at 2.306 eV;Physical Review B;1985-03-15
2. On the degradation of electroluminescence efficiency in gallium phosphide green light emitting diodes;Physica Status Solidi (a);1983-11-16
3. Thermal behaviour of the Cu-related 2.177 eV bound exciton in GaP;Journal of Physics C: Solid State Physics;1982-09-20
4. Optical properties of the Cu-related characteristic-orange-luminescence center in GaP;Physical Review B;1982-06-15
5. Native defects and stoichiometry in GaAlAs;Journal of Crystal Growth;1976-11
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