Defect formation during MBE growth of HgTe on CdTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy
2. Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular‐beam‐epitaxial growth of Hg1−xCdxTe and CdTe
3. The effect of CdTe substrate orientation on the Movpe growth of CdxHg1−xTe
4. NATO Workshop on Mercury Cadmium Telluride;Gilliard,1987
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1. MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs*;Chinese Physics Letters;2020-03-01
2. The temperature dependence of anomalous magnetoresistance and weak antilocalization in HgTe/CdTe (111) quantum wells;Journal of Applied Physics;2020-02-21
3. A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe;Journal of Electronic Materials;1998-06
4. Orientation dependence of morphology of (Hg, Cd)Te films grown by isothermal vapor phase epitaxy;Materials Science and Engineering: B;1994-11
5. Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1993-08
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