Homo-epitaxial growth of ZnSe by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. The Technology and Physics of Molecular Beam Epitaxy;Yao,1985
2. Homo- and heteroepitaxial growth of high quality ZnSe by molecular beam epitaxy
3. Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
4. Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)
5. Growth of high-purity ZnSe by sublimation THM and the characteristics of the Y and Z deep-level emission lines
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1. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
2. Optical Properties and Optoelectronic Applications of II–VI Semiconductor Heterostructures;The Handbook of Photonics, Second Edition;2006-12-21
3. Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE;SPIE Proceedings;1999-11-04
4. Post growth n-type doping of ZnSe-bulk single crystals;Journal of Crystal Growth;1999-08
5. Vapour growth of bulk ZnSe single crystals;Journal of Crystal Growth;1999-03
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