Crystal growth of large-area single-crystal CdTe and CdZnTe by the computer-controlled vertical modified-Bridgman process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Effect of variable thermal conductivity on isotherms in Bridgman growth
2. On control of the crystal-melt interface shape during growth in a vertical bridgman configuration
3. Influence of insulation on stability of interface shape and position in the vertical Bridgman-Stockbarger technique
4. Observation of dislocations in cadmium telluride by cathodoluminescence microscopy
5. The optimum choice of reflexion to reveal dislocations in gallium arsenide by X-ray reflexion topography
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2. Optimizing the temperature gradient for CdZnTe crystal growth using the vertical Bridgman–Stockbarger method;Journal of Crystal Growth;2023-11
3. High‐Performance Industrial‐Grade CsPbBr3 Single Crystal by Solid–Liquid Interface Engineering;Advanced Science;2023-06-06
4. INDUCED RESTRUCTURING OF THE CRYSTAL STRUCTURE AND ACOUSTIC RESPONSE IN SEMICONDUCTORS BASED ON CADMIUM TELLURIDE FOR USE IN OPTOELECTRONICS AND TOPICAL AREAS OF SEMICONDUCTOR TECHNOLOGY (REVIEW);Optoelektronìka ta napìvprovìdnikova tehnìka;2022-12-30
5. Optimizing ACRT to reduce inclusion formation during the VGF growth of cadmium zinc telluride: I. Computational approach;Journal of Crystal Growth;2021-12
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