Observation of defects in semiconductor-on-insulator (SOI) wafers by a nondestructive bulk micro-defect analyzer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
3. Nucleation of CuSi precipitate colonies in oxygen‐rich silicon
4. Suppression of oxidation‐stacking‐fault generation by preannealing in N2atmosphere
5. Gettering of surface and bulk impurities in Czochralski silicon wafers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy;Japanese Journal of Applied Physics;2008-04-25
2. Detection and Identification of Near-Surface Microprecipitates in Silicon Wafers by Laser Scattering Tomography;Japanese Journal of Applied Physics;1995-10-15
3. Characterization of striations in silicon wafers by a multipass Fabry-Pérot Rayleigh-Brillouin scattering spectrometer;Journal of Materials Research;1994-10
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