Growth by OMVPE and X-ray analysis of ZnTe and epilayers on III–V substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference41 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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2. Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals;Physical Review B;2016-10-06
3. GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy;Journal of Crystal Growth;2013-05
4. Effect of substrate temperature on photoconductivity, structural, and optical properties of vacuum evaporated Zinc Telluride films;Journal of Alloys and Compounds;2012-11
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