Electrical characterization and alloy scattering measurements of LPE GaxIn1-xAs/InP for high frequency device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. NSF Meeting on Optical Communications;Gammel,1981
2. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
3. Double heterostructure Ga0.47In0.53As MESFETs with submicron gates
4. Proc. 3rd Intern. Symp. on GaAs and Related Compounds;Hicks,1971
5. High purity LPE InP
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