Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm
2. 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP Substrates
3. Liquid phase epitaxial In1−xGaxAsyP1−ylattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm
4. Bandgap and lattice constant of GaInAsP as a function of alloy composition
5. Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial Growth and Amplifier Designs;Semiconductor Optical Amplifiers;2006-02
2. Epitaxy and Material Parameters of InGaAsP;Semiconductor Lasers;1993
3. Absorption and electroabsorption spectra of an In1−xGaxP1−yAsy/InP double heterostructure;Journal of Applied Physics;1988-06
4. Epitaxial growth of InP and related alloys;Progress in Crystal Growth and Characterization;1986-01
5. Epitaxy and Material Parameters of InGaAsP;Long-Wavelength Semiconductor Lasers;1986
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