Observation of microscopic defects in dislocation-free GaAs crystals by eutectic etching
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Dislocation-free GaAs and InP crystals by isoelectronic doping
2. Dislocation-free silicon-doped gallium arsenide grown by LEC procedure
3. Inhomogeneity of Resistivity in In-Doped Dislocation-Free Semi-Insulating LEC GaAs
4. A eutectic dislocation etch for gallium arsenide
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1. Bulk growth of GaAs An overview;Journal of Crystal Growth;1999-03
2. Sequential etching of GaAs;Journal of Crystal Growth;1993-03
3. X-ray diffuse scattering identification of matrix As-rich microdefects in GaAs crystals;Journal of Crystal Growth;1992-02
4. Observation of microdefects in indium-doped GaAs crystals by preferential etching and infrared light scattering tomography;Journal of Crystal Growth;1989-07
5. The formation of subgrain boundaries in GaAs single crystals;Journal of Electronic Materials;1989-05
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