Electrical and optical properties of high purity In0.5Ga0.5P grown on GaAs by liquid phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Degradation mechanisms of Ga1−xAlxAs visible diode lasers
2. BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS
3. Electronic Structure and Luminescence Processes in In1−xGaxP Alloys
4. Materials for light emitting diodes
5. Heterostructure bipolar transistors: What should we build?
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1. Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1);Computational Materials Science;2018-10
2. First Principles Prediction of Structural, Electronic and Optical Properties of Zinc Blende InxGa1–xP Alloys;Journal of Nanoelectronics and Optoelectronics;2017-03-01
3. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine;Journal of Materials Science;2006-10-20
4. Effects of cracker cell temperature and V/III ratio on GaInP grown by chemical beam epitaxy using TIPGa, EDMIn and TBP;Journal of Materials Science;2003
5. Chemical beam epitaxial growth of GaInP using TBP, TIPGa and EDMIn;Journal of Materials Science;2003
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