Parametric analysis of control parameters in MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Compositional transients in MOCVD grown III–V heterostructures
2. Evidence for transient composition variations at GaAs/Ga1−xAlxAs heterostructure interfaces prepared by metal-organic chemical vapour deposition
3. Characterization of LP-MOCVD Grown (Al, Ga)As/GaAs Heterostructures by Photoluminescence: Single Heterojunction and Inadvertent Quantum Wells
4. Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs
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