Anomalous dependence of In incorporation on substrate temperature into Zn-doped InGaA1P grown by low-pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD;Journal of Crystal Growth;2016-07
2. Zinc-induced lattice contraction in metalorganic vapor phase epitaxy grown AlGaInP;Thin Solid Films;2015-10
3. Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition;Journal of Crystal Growth;2000-12
4. The influence of window layers on the performance of 650nm AlGaInP/GaInP multi-quantum-well light-emitting diodes;Journal of Crystal Growth;1999-04
5. The influences of Zn-dopants on the lattice constant and surface morphology in Zn-doped AlGaAs grown by MOCVD;Journal of Crystal Growth;1997-08
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