Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy

Published:1992-11 Issue:1-4 Volume:124 Page:670-675
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang W.S.,Ehsani H.E.,Bhat I.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. The growth of CdHgTe on GaAs and fabrication of high‐quality photodiodes

2. Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates

3. Molecular‐beam epitaxy of CdxHg1−xTe at D.LETI/LIR

4. Determining the [001] crystal orientation of CdTe layers grown on (001) GaAs

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