The performance and reliability of 800–880 nm InAlGaAs/AlGaAs and InGaAs/AlGaAs strained layer ridge waveguide lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. AlInGaAs-AlGaAs strained single-quantum-well diode lasers
2. AlGaInAs/AlGaAs SSQW GRINSCH lasers for the wavelength region between 800 and 870 nm
3. AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
4. High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers
5. AlInGaAs/AlGaAs strained quantum-well ridge waveguide lasers grown by metalorganic chemical vapor deposition
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells;Materials Science Forum;2005-01
2. Threshold current density reduction of strained AlInGaAs quantum-well laser;IEEE Journal of Quantum Electronics;2004-10
3. High-Power InAlGaAs/GaAs and AlGaAs/GaAs Semiconductor Laser Arrays Emitting at 808 nm;IEEE Photonics Technology Letters;2004-02
4. Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers;Materials Science and Engineering: B;1999-12
5. Optical characterization of AlInGaAs/InGaAs quantum well structures on InGaAs substrates;Journal of Applied Physics;1997-07
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