High resolution scanning transmission electron microscopy (STEM) and luminescence characterization of ZnS/ZnSe multi quantum wells (MQWs) grown by MOVPE-Reference-Cited by-同舟云学术

High resolution scanning transmission electron microscopy (STEM) and luminescence characterization of ZnS/ZnSe multi quantum wells (MQWs) grown by MOVPE

Published:1992-11 Issue:1-4 Volume:124 Page:639-646
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bollig B.,Thorhauer P.,Kubalek E.,Söllner J.,Guimarães F.E.G.,Heuken M.,Heime K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Thermally induced optical bistability in ZnSe epilayers grown by molecular‐beam epitaxy

2. Blue‐green laser diodes

3. Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlattices

4. Physical Concepts of Materials for Novel Optoelectronic Device Applications;Söllner;SPIE Proc.,1990

5. Optical investigations and optimization of ZnSe/ZnS multi-quantum wells grown by MOVPE

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