Low threshold GaxIn1−xP/(AlyGa1−y)0.5In0.5P strained quantum well lasers-Reference-Cited by-同舟云学术

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Low threshold GaxIn1−xP/(AlyGa1−y)0.5In0.5P strained quantum well lasers

Published:1992-11 Issue:1-4 Volume:124 Page:751-756
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bour D.P.,Treat D.W.,Thornton R.L.,Paoli T.L.,Bringans R.D.,Krusor B.S.,Geels R.S.,Welch D.F.,Wang T.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Short-wavelength InGaAlP visible laser diodes

2. AlGaInP visible laser diodes grown on misoriented substrates

3. Extended Abstracts 18th Intern. Conf. on Solid State Devices and Materials;Ishikawa,1986

4. Low-threshold, strained-layer, GaInP/AlGaInP GRINSCH visible diode lasers

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1. Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures;Nanomaterials;2024-09-10

2. 650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer;Optoelectronics Letters;2006-07

3. High-performance GaInP/AlGaInP visible laser diodes grown by multiwafer MOCVD;SPIE Proceedings;2000-03-29

4. Measurement of optical cavity properties in semiconductor lasers by Fourier analysis of the emission spectrum;IEEE Journal of Quantum Electronics;1998

5. Theoretical studies of GaInP-AlGaInP strained quantum-well lasers including spin-orbit split-off band effect;IEEE Journal of Quantum Electronics;1995

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