An improved LPE apparatus for the growth of GaSb and GaAlSb epitaxial layers for infrared photodiodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm
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1. High purity GaSb grown by LPE in a sapphire boat;Journal of Crystal Growth;2000-01
2. The physics and technology of gallium antimonide: An emerging optoelectronic material;Journal of Applied Physics;1997-05
3. Surface morphology, electrical and optical properties of gallium antimonide layers grown by liquid phase epitaxy;Journal of Crystal Growth;1995-06
4. Infrared reflectance and optical properties of LPE-AlxGa1−xSb;Materials Letters;1994-04
5. Temperature dependence of band-gap energy of AlxGa1−xSb;Materials Letters;1992-10
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