Exciton and Raman processes of ZnS under tunable picosecond light pulse excitations-Reference-Cited by-同舟云学术

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Exciton and Raman processes of ZnS under tunable picosecond light pulse excitations

Published:1994-04 Issue:1-4 Volume:138 Page:873-876
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Uchiki H.,Kinto H.,Moriyama T.,Hata S.,Tsuboi N.,Wang J.,Iida S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. P-Type Conduction in ZnS Grown by Vapor Phase Epitaxy

2. Growth and characterization of p-type VPE ZnS layers

3. Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices

4. Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densities

5. Photoluminescence studies of p- and n-type ZnS layers grown by vapor phase epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonance Raman study of He+ion implanted nanostructured ZnS;Journal of Raman Spectroscopy;2008-12

2. Resonant Raman scattering in ZnS epilayers;Materials Chemistry and Physics;2003-02

3. Resonant Raman scattering measurements of strains in ZnS epilayers grown on GaP;Journal of Applied Physics;2002-06

4. Zinc sulfide (ZnS) property: impurity (defect) bound excitons;II-VI and I-VII Compounds; Semimagnetic Compounds

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