Gas source doping of molecular beam epitaxially grown CdTe using arsine-Reference-Cited by-同舟云学术

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Gas source doping of molecular beam epitaxially grown CdTe using arsine

Published:1994-04 Issue:3-4 Volume:137 Page:435-441
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Maruyama K.,Benz R.G.,Conte-Matos A.,Wagner B.K.,Summers C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Properties and applications of CdTe/sapphire epilayers grown by molecular beam epitaxy

2. Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

3. Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)

4. Current status of direct growth of CdTe and HgCdTe on silicon by molecular-beam epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical beam epitaxy of Hg1 − xCdxTe and related binaries;Progress in Crystal Growth and Characterization of Materials;1994-01

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