Angle resolved X-ray photoelectron spectroscopy of the surface of Hg0.85Zn0.15Te and after passivation processes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Effect of cleanings on the composition of HgCdTe surfaces
2. (Hg,Zn)Te: A new material for IR detection
3. Thermal Expansion Coefficient and Bond Strength in Hg1−xCdxTe and Hg1−xZnxTe
4. Vacancies and surface segregation in HgCdTe and HgZnTe
5. Growth and characterization of bulk HgZnTe crystals
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Temperature dependence of the dielectric function and of the parameters of critical point transitions of CdTe;Optical Materials;1999-05
2. Electrical characterization of the p-Hg1−xZnxTe interface after anodic sulfidization treatments;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
3. Surface properties of passivated;Semiconductor Science and Technology;1998-06-01
4. The dielectric function and interband transitions in;Journal of Physics: Condensed Matter;1996-07-29
5. Optical characterization of electrochemically grown anodic oxide on Hg0.85Zn0.15Te;Semiconductor Science and Technology;1995-07-01
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