Optical investigation of Ni impurity in ZnSe under hydrostatic pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions
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1. Explanations of the absorption spectra and their pressure coefficients for ZnSe:Ni2+ crystal;Physica B: Condensed Matter;2001-01
2. Competition of Deep and Shallow Impurities in Wide-Gap II-VI Semiconductors under Pressure;physica status solidi (b);1996-11-01
3. Photoluminescence inZn1−xCoxSe under hydrostatic pressure;Physical Review B;1996-08-15
4. The pressure dependence of the intraimpurity absorption and the charge transfer process of ZnS:Ni and ZnSe:Ni;Journal of Physics: Condensed Matter;1995-01-23
5. Magnetic tailoring of the nature of the fundamental optical transition in a ZnSe/(Zn,Mn)Se heterostructure;Physical Review B;1994-08-15
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