Electrical properties and annealing behaviour of CdxHg1−xTe grown by LPE and MOVPE-Reference-Cited by-同舟云学术

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Electrical properties and annealing behaviour of CdxHg1−xTe grown by LPE and MOVPE

Published:1986-12 Issue:1-3 Volume:79 Page:508-514
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Capper P.,Easton B.C.,Whiffin P.A.C.,Maxey C.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Proc. 2nd Conf. on Advanced Infrared Detectors and Systems;Baker,1983

2. A method for routine characterisation of the hole concentration in p-type cadmium mercury telluride

3. Effects of annealing on the electrical properties of CdxHg1−xTe

4. Precipitation of tellurium in (Hg, Cd)Te alloys

5. Lattice defects in (Hg,Cd)Te: Investigations of their nature and evolution

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cd-Hg-Te (Cadmium-Mercury-Tellurium);Non-Ferrous Metal Systems. Part 1;2006

2. Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe;Journal of Electronic Materials;1999-06

3. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999

4. Intrinsic and extrinsic doping;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

5. N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite IR detectors;Journal of Electronic Materials;1996-06

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