Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
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2. Etching Studies of Impurity Precipitates in Pulled GaP Crystals
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5. Plane Defect at the Interface and Dislocations in Epitaxially Grown GaAs
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1. An X-ray diffraction study of the lattice strain relaxation in MOVPE GaAs/Ge heterostructures;Journal of Physics D: Applied Physics;1995-04-14
2. New Method of Double-Crystal X-Ray Diffractrometric Determination of the Strained State in Surface-Layer Structures;Physica Status Solidi (a);1993-02-16
3. A high-resolution double-crystal diffractometer method for the measurement of lattice parameter in single crystals;Journal of Crystal Growth;1989-06
4. Investigation of heterostructure defects for LPE Ga1−xAlxAs/GaAs;Journal of Crystal Growth;1985-05
5. Epitaxial ice crystal growth on covellite (CuS) I. Influence of misfit strain on the growth of non-thickening crystals;Journal of Crystal Growth;1984-11
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