Melt-solid interface shape in LEC GaAs crystals: comparison between calculated and experimentally observed shapes-Reference-Cited by-同舟云学术

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Melt-solid interface shape in LEC GaAs crystals: comparison between calculated and experimentally observed shapes

Published:1996-09 Issue:1-4 Volume:166 Page:641-645
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Carrà Sergio,Fogliani Sabrina,Masi Maurizio,Zanotti Lucio,Mucchino Claudio,Paorici Carlo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Finite Element Analysis of a Thermal‐Capillary Model for Liquid Encapsulated Czochralski Growth

2. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth

3. Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

4. Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF Solutions

5. Proc. of 6th Int. Conf. on Semi-insulating III–V Materials;Weyher,1990

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs;Journal of Crystal Growth;2004-05

2. Transient dynamics and control of indium phosphide LEC furnaces;Materials Chemistry and Physics;2000-10

3. Sensitivity Analysis on Indium Phosphide Liquid Encapsulated Czochralski Growth;Crystal Research and Technology;1999-11

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