Growth kinetics in LPE of the Ga-In-P-As system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Phase equilibria in ternary III–V systems
2. Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As
3. The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagram
4. Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques
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1. Thermodynamic description of CdXHg1−XTe growth process by LPE;Journal of Non-Crystalline Solids;2008-10
2. Polyassociative model of A2B6 semiconductor melt and p−T−x equilibria in Cd–Hg–Te system;Journal of Crystal Growth;2008-05
3. The diffusion kinetics in isothermal epitaxy of CdxHg1 − x Te solid solutions from an unlimited liquid phase volume;Russian Journal of Physical Chemistry A;2007-11
4. Influence of elastic strains on LPE growth kinetics in the Cd–Hg–Te system;Semiconductor physics, quantum electronics and optoelectronics;2007-10-31
5. Isothermal growth kinetics of CdxHg1-xTe LPE layers;Semiconductor physics, quantum electronics and optoelectronics;2007-10-19
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