Electrical and optical properties of InP grown by MBE using P+ ion beam
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion Beam
2. Molecular beam epitaxy of InP using low-energy P + ion beam
3. Solid State Physics;Ashcroft,1981
4. Indium Phosphide
5. Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy
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1. Ion Beam Deposition and Cleaning;Low-Energy Ion Irradiation of Materials;2022
2. Selective area epitaxy of GaAs using very low energy Ga+ focused ion beam deposition combined with molecular beam epitaxial growth;Journal of Crystal Growth;1997-05
3. Atomic collisions in surface chemistry and film deposition;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
4. Electrical and optical properties of silicon doped InP grown by gas source MBE;Journal of Crystal Growth;1990-07
5. Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C + Beams;Science;1989-02-24
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