Thermal stability of (Ti + Zn)-co-doped semi-insulating InP single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Iron and Chromium Redistribution in Semi‐Insulating InP
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4. Extended Abstracts of 1986 Electronic Materials Conf.;Iseler,1986
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2. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2009-01
3. Deep levels in heavily Zn-doped InP layers implanted with Ti and Ti/P;Journal of Applied Physics;1998-02-15
4. Fe and Ti doping of InP grown by metalorganic chemical‐vapor deposition for the fabrication of thermally stable high‐resistivity layers;Journal of Applied Physics;1994-04-15
5. Thermally stable, buried high‐resistance layers in p‐type InP obtained by MeV energy Ti implantation;Journal of Applied Physics;1993-06
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